South Korean technology giant, Samsung has announced the advanced low-powered 20 nm (nano meter) based RAM, hinting the semiconductor piece may find its way in to the upcoming Galaxy S5.
Samsung Electronics, executive vice president, memory sales & marketing, Young-Hyun Jun said: "This next-generation LPDDR4 DRAM will contribute significantly to faster growth of the global mobile DRAM market, which will soon comprise the largest share of the entire DRAM market,"
This new 20 nm class based 8GB LPDDR4 (Low Power Double Data Rate series 4) memory chip offers highest level of density, efficiency and with four of the 8Gb chips, a single 4GB LPDDR4 package can provide the highest level of performance compared to the current crop of physical memory chips seen inside mobile devices.
Key features include:
- It consumes 1.1 volts power i.e., 40-percent less power consumed than the current chipsets found in the mobile devices
- It offers 50-percent more performance the previous generation chipsets
- It's maximum data transfer rate per pin of 3,200 megabits per second (Mbps), twice that of the current 20nm-class LPDDR3 DRAM found in mobile devices
- The new memory chipset boasts 1 gigabyte (GB) on a single die, which is the largest density available for DRAM (Dynamic Random Access Memory) in the industry today
- This chipset will enable mobile devices to have UHD (Ultra High Display) aka 4K screen, four times the resolution of full HD imaging.
Company says that the advanced memory chipset will be made available in 2014, leading many to believe to that the new chipset may actually feature in the Samsung's forthcoming flagship phone Galaxy S5.
Samsung's Galaxy S5 has been rumoured to feature the 64-bit architecture based processor and now with the addition of advanced physical memory, the new Galaxy smartphone will have more fire power to edge out rivals in the market.
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